Differences between MOSFET and IGBT

There are a few differences between MOSFET and IGBT. Both are semiconductor switching devices. They have a few differences regarding applications, switching speed, and power ratings.

Differences between MOSFET and IGBT

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are semiconductor switching devices.

There are the following differences between MOSFET and IGBT.

1- MOSFET is a voltage-controlled device. MOSFET becomes ON if we apply a voltage to the gate. If we remove the voltage at the gate terminal, then it will become OFF.

2- IGBT is a MOSFET along with a bipolar transistor at the output stage.

3- Like MOSFET, IGBT also becomes ON if we apply a voltage at the gate. If we remove the voltage at the gate, then It will become OFF.

4- However, IGBT also has a bipolar transistor at the output. The MOSFET at the input of the IGBT switches the output transistor by applying a signal at the base of the bipolar transistor.

5 – MOSFET is typically suitable for medium and low voltages. However, IGBT is suitable for high-voltage and high-current applications.

IGBT has a high current rating due to the presence of a bipolar transistor at the output stage and low ON-state voltage at higher currents.

6- MOSFET is useful for high-speed switching operations.

6- Asthe IGBT also has a bipolar transistor in addition to the MOSFET, switching may be slower than the MOSFET.

So, IGBT is useful for higher currents, but where switching speed is not so important.

7- IGBT also has lower losses due to less voltage drop at the output during the switching ON condition.

8- We used MOSFETs for lower voltage applications. We used IGBTs in the VFD applications for the traction converters.

SUMMARY

So the use and selection of the MOSFET or IGBT depends on the application, speed requirements, voltage and current ratings.

I hope that you enjoyed reading the article on the differences between MOSFET and IGBT.

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